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| TIP140F/141F/142F TIP140F/141F/142F Monolithic Construction With Built In BaseEmitter Shunt Resistors * Complement to TIP145F/146F/147F * High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) * Industrial Use 1 TO-3PF 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP140F : TIP141F : TIP142F Value 60 80 100 60 80 100 5 10 15 0.5 60 150 - 65 ~ 150 Units V V V V V V V A A A W C C 1.Base Equivalent Circuit C B VCEO VEBO IC ICP IB PC TJ TSTG Collector-Emitter Voltage : TIP140F : TIP141F : TIP142F Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature R1 R2 E R1 8k R2 0.12k Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP140F : TIP141F : TIP142F Collector Cut-off Current : TIP140F : TIP141F : TIP142F ICBO Collector Cut-off Current : TIP140F : TIP141F : TIP142F IEBO hFE VCE(sat) VBE(sat) VBE(on) tD tR tSTG tF Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Delay Time Rise Time Storage Time Fall Time VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 5A VCE = 4V, IC = 10A IC = 5A, IB = 10mA IC = 10A, IB = 40mA IC = 10A, IB = 40mA VCE = 4V, IC = 10A VCC = 30V, IC = 5A IB 1= 20mA, IB2 = -20mA RL = 6 0.15 0.55 2.5 2.5 1000 500 2 3 3.5 3 V V V V s s s s Rev. B1, December 2002 Test Condition IC = 30mA, IB = 0 Min. 60 80 100 Typ. Max. Units V V V ICEO VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 2 2 2 1 1 1 2 mA mA mA mA mA mA mA (c)2002 Fairchild Semiconductor Corporation TIP140F/141F/142F Typical Characteristics 10 IB = 2000uA 9 IC[A], COLLECTOR CURRENT IB = 1800uA IB = 1600uA IB = 1400uA IB= uA 1200 00uA = 10 100k IB IB = 800uA IB = 600uA VCE = 4V 10k 8 7 6 5 4 3 2 1 0 0 IB = 400uA hFE, DC CURRENT GAIN 5 1k IB = 200uA 100 1 2 3 4 10 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristics Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 1000 IC=500IB f=0.1MHz VBE(sat) 1 VCE(sat) Cob[pF], CAPACITANCE 100 0.1 0.01 0.1 10 1 10 100 1 10 100 1000 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 100 100 IC[A], COLLECTOR CURRENT 10 PC[W], POWER DISSIPATION 80 60 DC 40 1 TIP140F TIP141F TIP142F 20 0.1 1 10 100 1000 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 TIP140F/141F/142F Package Dimensions TO-3PF 5.50 0.20 4.50 0.20 15.50 0.20 o3.60 0.20 3.00 0.20 (1.50) 10.00 0.20 10 26.50 0.20 23.00 0.20 16.50 0.20 14.50 0.20 0.85 0.03 16.50 0.20 2.00 0.20 14.80 0.20 2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10 +0.20 2.00 0.20 2.50 0.20 2.00 0.20 3.30 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.90 -0.10 +0.20 3.30 0.20 2.00 0.20 5.50 0.20 1.50 0.20 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 22.00 0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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